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Conductivity modulation in p-i-n diodes simulated using a highly flexible approach

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3 Author(s)
Kramer, K.M. ; Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA ; Hitchon, W.N.G. ; Divan, D.M.

A highly flexible numerical tool for power device simulation has been developed. It allows devices to be simulated microscopically on the basis of device geometry and physics, which can be specified very easily and with few limitations. This framework (known as the symbolic generation language or SGL) also allows interfacing to external circuit components to permit time-domain simulations. Anomalous behavior in p-i-n diodes and insulated-gate bipolar transistors (IGBTs) has been experimentally observed and is being investigated with the microscopic model. The system is used to obtain a better understanding of an anomalous di/dt dependent voltage, referred to as conductivity modulation lag (CML). The presence of the CML effect has been confirmed by experiment and now by simulation for a p-i-n diode

Published in:

Industry Applications Society Annual Meeting, 1993., Conference Record of the 1993 IEEE

Date of Conference:

2-8 Oct 1993