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A high-performance W-band integrated source module using GaAs monolithic circuits

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6 Author(s)
Ho, T.C. ; Microwave Signal Inc., Clarksburg, MD, USA ; Chen, S. ; Tadayon, S. ; Pande, K.
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A high-performance integrated source module using a U-band MMIC HBT DRO and a U-hand MMIC MESFET power amplifier in conjunction with a W-band MMIC high-efficiency varactor doubler has been developed for millimeter-wave system applications. This paper describes the development and performance of this W-hand integrated source module. Measured results of the complete integrated source module show an output power of 10.6 dBm at 92.6 GHz and less than -126 dBc/Hz phase noise at 5 MHz offset from the carrier. These results represent the highest reported power and phase noise achieved at W-band using HBT, MESFET, and varactor frequency-doubling technologies.<>

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:4 ,  Issue: 7 )

Date of Publication:

July 1994

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