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A novel compact monolithic active regulated self-biased InP HEMT amplifier

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7 Author(s)
Kobayashi, K.W. ; Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA ; Lai, R. ; Ng, G.I. ; Tan, K.L.
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This letter reports on the first results of a monolithic active regulated self-biased HEMT amplifier fabricated in InP technology. The self-bias scheme incorporates an op-amp-based HEMT regulator topology that regulates the bias current to within 6% over a threshold variation of /spl plusmn/0.2 V. The DC yield based on this performance criteria was 75% across a wafer. The InP HEMT amplifier achieves an RF gain of 10-dB and a 3-dB bandwidth of 1-14 GHz. Across a wafer with a total threshold variation of 0.4 V, the gain variation was maintained to less than /spl plusmn/1 db. The compact integrated HEMT regulated amplifier circuit was realized using area-efficient analog design techniques that consumed less than 1.3/spl times/1.1 mm/sup 2/. This demonstration has far-reaching implications to the producibility and reliability of InP HEMT MMIC's.<>

Published in:

Microwave and Guided Wave Letters, IEEE  (Volume:4 ,  Issue: 7 )