By Topic

The plasma characteristics and film formation generated by the electron cyclotron resonance mechanism

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kim, Jung-Hyung ; Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea ; Kim, Yong‐Jin ; Lee, Pyung‐Woo ; Sun-Kyu Song
more authors

Silicon nitride thin film (SiNx) is deposited onto the 3 inch silicon wafer using an electron cyclotron resonance (ECR) plasma apparatus. The plasma parameters from N2-SiH4 electron cyclotron resonance plasma are obtained. Radial distribution of radical atom density is determined by optical emission spectroscopy. From the comparison of the uniformities of deposited film thickness, electron density and radical atom density, it was concluded that the uniformity of film thickness is related to that of radical density rather than plasma density. The dependence of the uniformity film thickness on the waveguide mode was also examined

Published in:

Plasma Science, IEEE Transactions on  (Volume:22 ,  Issue: 3 )