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Wide bandgap compound semiconductors for superior high-voltage unipolar power devices

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2 Author(s)
Chow, T.P. ; Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA ; Tyagi, Ritu

This paper presents a critical evaluation of the performance capabilities of various wide bandgap semiconductors for high power and high frequency unipolar electronic devices. Seven different figures of merit have been analyzed. Theoretical calculations show that besides diamond and SiC, compounds like AlN, GaN, InN, and ZnO, and the intermetallics (GaxIn1-xN, AlxIn1-xN, AlxGa1-xN, and (AlN)x(SiC)1-x) offer several orders of magnitude improvement in the on-resistance and in the potential for successful operation at higher temperatures

Published in:

Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 8 )

Date of Publication:

Aug 1994

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