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Hot-carrier degradation behavior of N- and P-channel MOSFET's under dynamic operation conditions

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4 Author(s)

An in-depth study of the dynamic hot-carrier degradation behavior of N- and P-channel MOS transistors was performed based on the change of charge pumping and I-V characteristics. It is shown that for transistors with channel lengths ranging from 2 to 0.5 μm and frequencies up to 100 MHz the degradation under dynamic stress can completely be described as a quasi-static degradation, provided all static degradation effects are taken into account in the appropriate way. This means that the influence of post-stress effects and charge buildup or charge detrapping have to be considered

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Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 8 )