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An in-depth study of the dynamic hot-carrier degradation behavior of N- and P-channel MOS transistors was performed based on the change of charge pumping and I-V characteristics. It is shown that for transistors with channel lengths ranging from 2 to 0.5 μm and frequencies up to 100 MHz the degradation under dynamic stress can completely be described as a quasi-static degradation, provided all static degradation effects are taken into account in the appropriate way. This means that the influence of post-stress effects and charge buildup or charge detrapping have to be considered
Published in:
Electron Devices, IEEE Transactions on
(Volume:41
,
Issue:
8
)
Date of Publication: Aug 1994
- Page(s):
- 1421 - 1428
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 4780831
- Digital Object Identifier :
- 10.1109/16.297738
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Aug 1994
- Sponsored by :
- IEEE Electron Devices Society
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