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A super self-aligned selectively grown SiGe base (SSSB) bipolar transistor fabricated by cold-wall type UHV/CVD technology

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4 Author(s)
Sato, F. ; ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan ; Tatsumi, T. ; Hashimoto, T. ; Tashiro, T.

A novel selective epitaxial growth (SEG) technology for fabricating the intrinsic SiGe-base layer of a double poly-Si self-aligned bipolar transistor has been developed. Selectively grown Si and SiGe-alloy layers were obtained by using Si2H6+GeH4+Cl2+B2 H6 gas system using cold-wall ultra-high vacuum (UHV)/CVD. We have optimized the growth conditions so that Si or SiGe grows selectively against Si3N4 both on single crystalline Si and on poly-Si of a structure consisting of a poly-Si layer overhanging the single crystalline Si substrate. The selective growth is maintained until the growth from the bottom Si and the top poly-Si coalesce. This selective growth permits a novel emitter-base self-aligned transistor which we call a super self-aligned selectively grown SiGe base (SSSB) HBT

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Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 8 )