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Pulsed high-power operation of p+pnn+-avalanche diodes near avalanche resonance for mm-wave oscillators

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2 Author(s)
Gaul, L. ; Lehrstuhl fur Allgemeine Elektrotech. und Angewandte Elektronik, Tech. Univ. Munchen, Germany ; Claassen, M.

Results of a systematic investigation by computer simulation of symmetric GaAs p+pnn+-avalanche diodes for pulsed high-power operation near avalanche resonance at millimeter-wave frequencies are presented. Different operation modes have been found at dc-current densities as high as necessary for avalanche resonance and are classified with regard to dynamic dc stability. A pin-like Misawa mode of operation with compensated space-charge of mobile and fixed charge carriers (space-charge compensated pin mode) and a quasi-Impatt mode with separated generation and drift regions are calculated to yield high RF power at high impedance level. Maximum RF-output power up to 100 W can be expected from the space-charge compensated pin mode at 1 Ω matching impedance for 60 GHz with an efficiency of 14%

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Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 8 )