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p-channel germanium MOSFETs with high channel mobility

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3 Author(s)
Martin, S.C. ; Div. of Eng., Brown Univ., Providence, RI, USA ; Hitt, L.M. ; Rosenberg, J.J.

The fabrication and performance of p-channel germanium MOSFETs having a nitrided native oxide gate insulator are reported. A self-aligned dummy-gate process suitable for circuit integration is utilized. Common-source characteristics exhibit no looping and indicate a peak room-temperature channel mobility of 770 cm/sup 2//V-s. These results provide further evidence that a high-performance germanium CMOS technology is possible.<>

Published in:

Electron Device Letters, IEEE  (Volume:10 ,  Issue: 7 )