p-channel germanium MOSFETs with high channel mobility

The fabrication and performance of p-channel germanium MOSFETs having a nitrided native oxide gate insulator are reported. A self-aligned dummy-gate process suitable for circuit integration is utilized. Common-source characteristics exhibit no looping and indicate a peak room-temperature channel mobility of 770 cm/sup 2//V-s. These results provide further evidence that a high-performance germanium CMOS technology is possible.<
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