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Low-frequency noise in p-channel heterostructure insulated-gate field-effect transistors (HIGFETs) at 77 K and drain current 1 mu A

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3 Author(s)
Birbas, A.N. ; Dept. of Electr. Eng., Minnesota Univ., MN, USA ; van Rheenen, Arthur D. ; Baier, S.M.

Measurements of the low-frequency spectral intensity of the current fluctuations in p-channel GaAs/AlGaAs heterostructure insulated-gate field-effect transistors are discussed. The measurements were performed at 77 K and a drain current of 1 mu A. The spectra of two types of devices are compared, one grown directly on the substrate and the other embedded in an n-well. The latter type produced markedly less noise, its spectrum being almost perfect 1/f noise. The former type exhibited, in addition to the 1/f noise, a significant generation-recombination noise component in the spectrum.<>

Published in:

Electron Device Letters, IEEE  (Volume:10 ,  Issue: 7 )

Date of Publication:

July 1989

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