Referenced Items are not available for this document.
Antifuse samples with very thin insulating oxide were fabricated using a technique of two-step PECVD oxide deposition. Dielectric strength as high as 13 MV/cm was obtained for our samples. Defect density and uniformity have been improved in this way. The on-state resistance of the programmed antifuses shows a stronger dependence on the oxide thickness when it was programmed at the lower current than when it was programmed at the higher current.<
Published in:
Electron Device Letters, IEEE
(Volume:15
,
Issue:
8
)
Date of Publication: Aug. 1994
- Page(s):
- 310 - 312
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4767690
- Digital Object Identifier :
- 10.1109/55.296226
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Aug. 1994
- Sponsored by :
- IEEE Electron Devices Society
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