By Topic

Metal-to-metal antifuses with very thin silicon dioxide films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Zhang, G. ; Dept. of Phys., California Univ., Berkeley, CA, USA ; Hu, C. ; Yu, P. ; Chiang, S.
more authors

Antifuse samples with very thin insulating oxide were fabricated using a technique of two-step PECVD oxide deposition. Dielectric strength as high as 13 MV/cm was obtained for our samples. Defect density and uniformity have been improved in this way. The on-state resistance of the programmed antifuses shows a stronger dependence on the oxide thickness when it was programmed at the lower current than when it was programmed at the higher current.<>

Published in:

Electron Device Letters, IEEE  (Volume:15 ,  Issue: 8 )