By Topic

Effects of post-deposition annealing on the electrical properties and reliability of ultrathin chemical vapor deposited Ta/sub 2/O/sub 5/ films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Han, L.K. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Yoon, G.W. ; Kwong, D.L. ; Mathews, V.K.
more authors

This paper reports the effects of post-deposition rapid thermal annealing on the electrical characteristics of chemical vapor deposited (CVD) Ta/sub 2/O/sub 5/ (/spl sim/10 nm) on NH/sub 3/-nitrided polycrystalline silicon (poly-Si) storage electrodes for stacked DRAM applications. Three different post-deposition annealing conditions are compared: a) 800/spl deg/C rapid thermal O/sub 2/ annealing (RTO) for 20 sec followed by rapid thermal N/sub 2/ annealing (RTA) for 40 sec, b) 800/spl deg/C RTO for 60 sec and c) 900/spl deg/C RTO for 60 see. Results show that an increase in RTO temperature and time decreases leakage current at the cost of capacitance. However, over-reoxidation induces thicker oxynitride formation at the Ta/sub 2/O/sub 5//poly-Si interface, resulting in the worst time-dependent dielectric breakdown (TDDB) characteristics.<>

Published in:

Electron Device Letters, IEEE  (Volume:15 ,  Issue: 8 )