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Si-based receivers for optical data links

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3 Author(s)
B. Jalali ; Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA ; L. Naval ; A. F. J. Levi

We present results for GexSi1-x waveguide pin detectors grown by rapid thermal chemical vapor deposition (RTCVD). Detectors with multiple Ge0.29Si0.71 absorption layers show an internal quantum efficiency of 33% at λ=1.3 μm with a dark current of 27 pA/μm2. The external quantum efficiency is limited to 7% by the fiber-to-waveguide coupling efficiency. The output eye diagram for a hybrid λ=1.3 μm silicon receiver at 500 Mb/s is demonstrated. Prospects of a silicon-based optoelectronic receiver array technology are discussed

Published in:

Journal of Lightwave Technology  (Volume:12 ,  Issue: 6 )