By Topic

Extracting transistor changes from device simulations by gradient fitting

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Coughran, W.M., Jr. ; AT&T Bell Labs., Murray Hill, NJ, USA ; Fichtner, Wolfgang ; Grosse, Eric

The results of small-signal or transient analyses from a conventional device simulator (or measured data) can be combined with gradient-fitting techniques to produce smooth spline-based MOSFET charge models for circuit simulation. These techniques are also applicable to shape-from-shading problems. Results based on simulations of some small devices are presented. The comparative efficiencies of the small-signal and transient approach are discussed as well as the relation between the so-called small- and large-signal charges. The role of spline-based table models as against compact analytical models is considered

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:8 ,  Issue: 4 )