By Topic

Improved physical modeling of submicron MOSFETs based on parameter extraction using 2-D simulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Hwang, C.G. ; Dept. of Electr. Eng., Stanford Univ., CA, USA ; Dutton, R.W.

Hot electron effects for n-channel submicron MOSFET devices have been analyzed on the basis of accurate physical models. The PISCES-Monte Carlo scheme is implemented to calculate impact ionization coefficients and predict accurately the generation of electron-hole pairs. The coupling scheme also provides important physical parameters and constants for developing substrate and gate current models as well as an improved mobility model, especially for high drain and gate bias conditions. The analytical models for impact ionization, thermionic emission and mobility are incorporated into the PISCES program and give accurate predictions compared with experimental results. These models predict the peak and saturated transconductance curves for the high drain voltage of LDD MOSFET devices

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:8 ,  Issue: 4 )