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An efficient self-consistent device simulator coupling Poisson equation and Monte Carlo transport suitable for general silicon devices, including those with regions of high doping/carrier densities, is discussed. Key features include an original iteration scheme and an almost complete vectorization of the program. The simulator has been used to characterize nonequilibrium effects in deep submicron nMOSFETs. Substantial overshoot effects are noticeable at gate lengths of 0.25 μm at room temperatures
Published in:
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
(Volume:8
,
Issue:
4
)
Date of Publication: Apr 1989
- Page(s):
- 360 - 369
- ISSN :
- 0278-0070
- INSPEC Accession Number:
- 3430386
- Digital Object Identifier :
- 10.1109/43.29590
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Apr 1989
- Sponsored by :
- IEEE Council on Electronic Design Automation
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