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Two-dimensional impurity profiling with emission computed tomography techniques

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4 Author(s)

A technique for the determination of two-dimensional impurity profiles in silicon using methods for emission computed tomography is presented. Several one-dimensional impurity profiles obtained for different directions through the sample are used to reconstruct the two-dimensional profile. A simulation study of the experiment is described, and effects of various experimental and reconstruction parameters are discussed. Reconstructions of an area of 4 μm×4 μm from thirteen one-dimensional measurements, with a resolution of 1000 Å, are numerically possible

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:8 ,  Issue: 4 )