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GaAs Read-type IMPATT diodes for D-band

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3 Author(s)
Tschernitz, M. ; Lehrstuhl fur Allgemeine Elektrotech., und Angewandte Elektronik, Munchen ; Freyer, J. ; Grothe, H.

GaAs Read-type IMPATT diodes for operation at D-band frequencies have been designed and fabricated. The main design feature is low DC input voltage and high current density. The devices are encapsulated using the novel module technique on diamond heatsinks. RF output powers of 75 mW at 120 GHz and 8 mW at 144 GHz are realised. The highest oscillation frequency for CW operation is 150 GHz

Published in:

Electronics Letters  (Volume:30 ,  Issue: 13 )

Date of Publication:

23 Jun 1994

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