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Low threshold current density InGaAs surface-emitting lasers with periodic gain active structure

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3 Author(s)
Yoo, B.-S. ; Electron. & Telecommun. Res. Inst., Taejon ; Park, H.-H. ; Lee, E.-H.

The authors have obtained very low threshold current densities for InGaAs vertical-cavity surface-emitting lasers using a periodic gain active structure. For a 40 μm diameter device, the threshold current density for room-temperature CW operation was as low as 380 A/cm2 with light output power of more than 11 mW

Published in:

Electronics Letters  (Volume:30 ,  Issue: 13 )