Referenced Items are not available for this document.
The authors have developed a new GaAs-MMIC process technology using low-temperature deposited SrTiO3 thin film capacitors which were combined with WSi-gate selfaligned FETs. The SrTiO3 films were successfully deposited at 200°C by the RF magnetron sputtering method without degrading the FET characteristics. By integrating these on-chip SrTiO3 bypass capacitors onto the GaAs IC, the parasitic inductance from the source to ground interconnection was successfully reduced and an enhanced gain characteristic was obtained for a self-biased amplifier circuit
Published in:
Electronics Letters
(Volume:30
,
Issue:
13
)
Date of Publication: 23 Jun 1994
- Page(s):
- 1045 - 1046
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 4732796
- Digital Object Identifier :
- 10.1049/el:19940718
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 23 Jun 1994
- Sponsored by :
- Institution of Engineering and Technology
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