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Characteristics of inversion-channel and buried-channel MOS devices in 6H-SiC

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3 Author(s)
S. T. Sheppard ; Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA ; M. R. Melloch ; J. A. Cooper

Inversion-channel and buried-channel gate-controlled diodes and MOSFET's are investigated in the wide bandgap semiconductor 6H-SiC. These devices are fabricated using thermal oxidation and ion implantation. The gate-controlled diodes allow room temperature measurement of surface states, which is difficult with MOS capacitors due to the 3 eV bandgap of 6H-SiC. An effective electron mobility of 20 cm2/Vs is measured for the inversion-channel devices and a bulk electron mobility of 180 cm2/Vs is found in the channel of the buried-channel MOSFET. The buried-channel transistor is the first ion-implanted channel device in SIC and the first buried-channel MOSFET in the 6H-SiC polytype

Published in:

IEEE Transactions on Electron Devices  (Volume:41 ,  Issue: 7 )