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Source-to-drain breakdown voltage improvement in ultrathin-film SOI MOSFET's using a gate-overlapped LDD structure

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7 Author(s)

A gate-overlapped LDD structure was introduced to ultra-thin SOI MOSFET's in order to overcome the degradation in source-to-drain breakdown voltage (BVds) due to a parasitic bipolar action. By reductions in drain electric field and parasitic resistance at a source n- region, the BVds was improved with almost the same current drivability as that in single drain structure. The behavior of the BVds on LDD n- concentration was investigated by use of a numerical device simulator, and it was found that the electric field at a lower portion of the n- region, which forms the current path, was relaxed effectively at an optimum n- doping condition

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Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 7 )