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Modeling of the hot electron subpopulation and its application to impact ionization in submicron silicon devices-Part II: numerical solutions

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2 Author(s)
Scrobohaci, P.G. ; Technol. Modeling Assoc., Palo Alto, CA, USA ; Ting-Wei Tang

A macroscopic transport model for the hot electron subpopulation (HES) and a nonlocal impact ionization (II) model were proposed in Part I of this article: see ibid. p. 1200, 1994. The transport equations have been derived from the Boltzmann transport equation (BTE) and closure has been provided by an empirically determined equation. The transport equations and the II model have been calibrated using data obtained from self-consistent Monte Carlo (SCMC) simulations. In this article we present the numerical solutions obtained by applying the proposed model to n+- n--n+ structures with various doping profiles. The results are compared to the data obtained from SCMC simulations and also to those obtained from models proposed earlier by other authors

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Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 7 )