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An analytical a-Si:H TFT DC/capacitance model using an effective temperature approach for deriving a switching time model for an inverter circuit considering deep and tail states

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2 Author(s)
Shiao-Shien Chen ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Kuo, J.B.

This paper presents an analytical a-Si:H DC/capacitance model using an effective temperature approach for deriving a switching time model for an inverter circuit considering deep and tail states. Using an effective temperature approach, the localized deep and tail states have been considered in the DC/capacitance model and the switching time model. As verified by the published data, the analytical DC/capacitance model provides an accurate prediction. Based on the analytical model, the threshold voltage of an a-Si:H TFT is proportional to the deep state density and the switching time of the TFT-inverter is dependent on the tail state density

Published in:

Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 7 )

Date of Publication:

Jul 1994

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