A novel technology for a-Si TFT-LCD's with buried ITO electrode structure

A novel process technology for a-Si TFT-LCD's with the buried ITO electrode (BI) structure was developed and applied to 10-in-diagonal LCD panels. By employing the BI structure, an aperture ratio of 29% was achieved in high resolution panels with a pixel size of 192 /spl mu/ and the pixel defect density was reduced to about one third of the conventional structure. The defect reduction effect of the BI structure was also confirmed theoretically. The BI structure provides significant advantages for high-performance TFT-LCD's.<
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