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Process and device optimization of an analog complementary bipolar IC technology with 5.5-GHz fT pnp transistors

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4 Author(s)
Yamaguchi, T. ; Microelectron., Tektronix Inc., Beaverton, OR, USA ; Archer, T.M. ; Johnston, R.E. ; Lee, J.S.

An analog complementary bipolar IC process has been developed featuring 9.0-GHz fT npn and 5.5-GHz fT pnp transistors. Process conditions for emitter, base, and collector of pnp transistors are optimized in order to achieve the best performance tradeoff between current gain, Early voltage, and cutoff frequency. With the optimized process conditions, the HFE×VA of pnp transistors is 350 V with fT of 5.5 GHz and fmax of 8.5 GHz. These high performance pnp transistors have been integrated into an existing 9.0-GHz fT npn bipolar process without introducing excessive additional process complexity and manufacturing costs. In addition, Schottky diodes, p-channel junction FET's and laser wafer trimmable precision NiCr resistors have been integrated into the process to enhance analog circuit design capability

Published in:

Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 6 )

Date of Publication:

Jun 1994

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