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Physical model of drain conductance, gd, degradation of NMOSFET's due to interface state generation by hot carrier injection

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3 Author(s)
I. Kurachi ; Process Technol. Center, OKI Electr. Ind. Co. Ltd., Tokyo, Japan ; Nam Hwang ; L. Forbes

Degradation of analog device parameters such as drain conductance, gd, due to hot carrier injection has been modeled for NMOSFET's. In this modeling, mobility reduction caused by interface state generation by hot carrier injection and the gradual channel approximation were employed. It has been found that gd degradation can be calculated from linear region transconductance, gm, degradation which is usually monitored for hot carrier degradation of MOSFET's. The values of gd degradation calculated from gm degradation fit well to the measured values of gd degradation The dependence of the gd degradation lifetime on Leff has been also studied, this model also provides an explanation of the dependence on Leff. The model is then useful for lifetime predictions of analog circuits in which gd degradation is usually more important than gm degradation

Published in:

IEEE Transactions on Electron Devices  (Volume:41 ,  Issue: 6 )