By Topic

Low temperature identification of interfacial and bulk defects in Al/SiO2/Si capacitor structures by electron beam induced current

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
H. R. Kirk ; Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA ; Z. Radzimski ; A. Buczkowski ; C. A. Rozgonyi

A low temperature electron beam induced current (EBIC) study using Al/SiO2/Si capacitors as probes of defects affecting the electrical properties of the bulk Si, SiO2 interface and the SiO2 layer is presented. The technique's relevance to current research on thin oxides and EBIC image enhancements obtained at reduced temperature are explained. The characteristic EBIC contrast representative of three capacitor bias conditions are reviewed as follows: 1) localized temperature dependent recombination at extended bulk defects for inversion bias, 2) spatial variation of the flat-band voltage due to nonuniform interfacial or oxide charge distributions for weak depletion bias, and 3) electron beam enhancement of SiO2 leakage currents at defect sites for accumulation bias. Illustrations of these contrast modes are presented for samples containing buried epitaxial misfit dislocations and oxide interface defects

Published in:

IEEE Transactions on Electron Devices  (Volume:41 ,  Issue: 6 )