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An analytical model for high electron mobility transistors

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2 Author(s)
Hyungkeun Ahn ; Dept. of Electr. Eng., Pittsburgh Univ., PA, USA ; Mahmoud El Nokali

In this paper we present a new model for HEMT's which is based on a single analytical function that describes the electron concentrations in the two dimensional electron gas and in the AlGaAs layer. Besides accounting for the AlGaAs conduction, the model includes the effect of mobility degradation, channel length modulation in the saturation region and the series resistances RS and RD. The model results in closed form expressions for the current, transconductance, output conductance and gate capacitance. Finally, the theoretical predictions of the model are compared with the experimental data and shown to be in good agreement over a wide range of bias conditions

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Electron Devices, IEEE Transactions on  (Volume:41 ,  Issue: 6 )