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Design, measurement and analysis of CMOS polysilicon TFT operational amplifiers

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4 Author(s)
Hai-Gang Yang ; Dept. of Eng., Cambridge Univ., UK ; S. Fluxman ; C. Reita ; P. Migliorato

The small signal properties of polysilicon TFT opamps have been investigated in this paper. A method for the scaling of gm (transconductance) and gds (output conductance) has been proposed, facilitating their estimates for various transistors in operational amplifiers. The analysis of two CMOS opamps fabricated by a low temperature, glass compatible poly-Si TFT process is demonstrated in comparison to the measured performance. The first implementation has been internally compensated with high load-driving capability (up to 36 pF), while the second one has employed a cascode stage for increased gain (56 dB)

Published in:

IEEE Journal of Solid-State Circuits  (Volume:29 ,  Issue: 6 )