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Low noise AlInAs/InGaAs HEMT using WSi ohmic contact

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9 Author(s)
Yoshida, N. ; Optoelectron. & Microwave Devices Lab., Mitsubishi Electr. Corp., Hyogo ; Yamamoto, Y. ; Katoh, K. ; Minami, H.
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A 0.15 μm T-shaped gate AlInAs/InGaAs HEMT with excellent RF performance has been developed using refractory WSi non-alloyed ohmic contacts. An extremely low noise figure of 0.8 dB with an associated gain of 8.0 dB has been achieved at 40 GHz for an SiON-passivated device

Published in:

Electronics Letters  (Volume:30 ,  Issue: 12 )