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High-quality InGaAs/InP multiquantum-well structures on Si fabricated by direct bonding

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4 Author(s)
K. Mori ; Opto-Electron. Res. Labs., NEC Corp., Ibaraki ; K. Tokutome ; K. Nishi ; S. Sugou

High-quality InGaAs/InP multiquantum-well (MQW) structures have been successfully fabricated on Si substrates by direct bonding. These structures were first grown on InP substrates, then bonded at 700°C on to Si substrates with buffer layers. The etch-pit densities of the InP surfaces are significantly low, -10 cm-2, the lowest values ever reported. Furthermore, strong relative photoluminescence intensity from the MQW structures, over 70% of that before bonding, is obtained

Published in:

Electronics Letters  (Volume:30 ,  Issue: 12 )