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New CMOS triode transconductor

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3 Author(s)
Lee, S.O. ; Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon ; Park, S.B. ; Lee, K.R.

A new CMOS transconductor is proposed, which is built around two conversion transistors operating in the triode region with their source and drain voltages kept constant. The proposed transconductor has an input swing range of 7 V peak to peak within 1% THD at supply voltages of ±5 V and a large transconductance tuning range. Moreover, it can operate satisfactorily regardless of the transistor body connection

Published in:

Electronics Letters  (Volume:30 ,  Issue: 12 )