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An investigation into the nonquasistatic effects in MOS devices with on-wafer S-parameter techniques

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4 Author(s)
Singh, R. ; SGS-Thomson Microelectron., Grenoble, France ; Juge, A. ; Joly, R. ; Mortin, G.

The high-frequency characteristics of MOS devices are investigated with a view to the identification of nonquasistatic (NQS) effects considering the Bagheri and Tsividis I-order NQS model as a reference. An exhaustive set of data is analyzed. It indicates the existence of NQS effects in long- as well as short-channel devices. Significant differences are observed between a charge based quasi-static model and measurements for a long-channel (25-μm) device. A deembedding technique is suggested to observe the intrinsic device behavior up to a higher range of frequencies

Published in:

Microelectronic Test Structures, 1993. ICMTS 1993. Proceedings of the 1993 International Conference on

Date of Conference:

22-25 Mar 1993