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High output power and high temperature operation of 1.5 μm DFB-PPIBH laser diodes

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6 Author(s)
S. Kakimoto ; Mitsubishi Electr. Corp., Hyogo, Japan ; Y. Nakajima ; A. Takemoto ; N. Yoshida
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Highly efficient 1.5-μm distributed-feedback (DFB) p-substrate partially-inverted buried heterostructure laser diodes with a thin active layer developed using a metal-organic chemical vapor deposition technique are discussed. An average slope efficiency of 0.26 mW/mA (quantum efficiency 33%) and maximum slope efficiency of 0.39 mW MW/mA (49%) were achieved. The full width at half maximum in the direction perpendicular to the junction plane of 25° was obtained. A high output power of 77 mW was obtained under CW conditions at room temperature. This laser diode lased up to 120°C, and more than 10 mW was obtained, even at 90°C

Published in:

IEEE Journal of Quantum Electronics  (Volume:25 ,  Issue: 6 )