By Topic

High output power and high temperature operation of 1.5 μm DFB-PPIBH laser diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Kakimoto, S. ; Mitsubishi Electr. Corp., Hyogo, Japan ; Nakajima, Y. ; Takemoto, A. ; Yoshida, N.
more authors

Highly efficient 1.5-μm distributed-feedback (DFB) p-substrate partially-inverted buried heterostructure laser diodes with a thin active layer developed using a metal-organic chemical vapor deposition technique are discussed. An average slope efficiency of 0.26 mW/mA (quantum efficiency 33%) and maximum slope efficiency of 0.39 mW MW/mA (49%) were achieved. The full width at half maximum in the direction perpendicular to the junction plane of 25° was obtained. A high output power of 77 mW was obtained under CW conditions at room temperature. This laser diode lased up to 120°C, and more than 10 mW was obtained, even at 90°C

Published in:

Quantum Electronics, IEEE Journal of  (Volume:25 ,  Issue: 6 )