High output power and high temperature operation of 1.5 mu m DFB-PPIBH laser diodes

Highly efficient 1.5- mu m distributed-feedback (DFB) p-substrate partially-inverted buried heterostructure laser diodes with a thin active layer developed using a metal-organic chemical vapor deposition technique are discussed. An average slope efficiency of 0.26 mW/mA (quantum efficiency 33%) and maximum slope efficiency of 0.39 mW MW/mA (49%) were achieved. The full width at half maximum in the direction perpendicular to the junction plane of 25 degrees was obtained. A high output power of 77 mW was obtained under CW conditions at room temperature. This laser diode lased up to 120 degrees C, and more than 10 mW was obtained, even at 90 degrees C.<
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