By Topic

A simplified analysis of the optical bistability of multiple quantum well etalons

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Yokoyama, H. ; MIT, Cambridge, MA, USA

An analysis of static room-temperature-operation characteristics of a reflection-mode semiconductor multiple-quantum well etalon by a simplified two-level system formula of optical nonlinear properties and a computer simulation is presented. In the calculation for a GaAs/AlGaAs multiple-quantum-well etalon using the parameters reported in experimental measurement, it is shown that the very large excitonic optical nonlinearity is not effectively utilized for the optical bistable operation. This occurs because the effective positive-feedback mechanism which increases the etalon internal light intensity is suppressed when a hardly saturable background interband absorption tail is larger than a few thousand cm-1 at a wavelength where the large excitonic dispersive nonlinearity is observed

Published in:

Quantum Electronics, IEEE Journal of  (Volume:25 ,  Issue: 6 )