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Interface studies of MBE-grown GaInAs/GaAsSb heterostructures lattice-matched to InP by Auger electron spectroscopy

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5 Author(s)
Fujii, T. ; Fujitsu Labs. Ltd., Atsugi, Japan ; Nakata, Y. ; Sugiyama, Y. ; Toda, Y.
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The first interface study of an MBE-grown GaInAs/GaAsSb heterostructure lattice-matched to InP has been performed by Auger electron spectroscopy combined with ion sputtering. No surface segregation of Sb in the GaInAs/GaAsSb heterostructure was observed. The measured interface width of this heterostructure was found to be 2.2 nm by monitoring the Auger peak-to-peak height of the Sb MNN transition under 0.5 kV Ar+ ion sputtering

Published in:

Electronics Letters  (Volume:24 ,  Issue: 19 )