Referenced Items are not available for this document.
The first interface study of an MBE-grown GaInAs/GaAsSb heterostructure lattice-matched to InP has been performed by Auger electron spectroscopy combined with ion sputtering. No surface segregation of Sb in the GaInAs/GaAsSb heterostructure was observed. The measured interface width of this heterostructure was found to be 2.2 nm by monitoring the Auger peak-to-peak height of the Sb MNN transition under 0.5 kV Ar+ ion sputtering
Published in:
Electronics Letters
(Volume:24
,
Issue:
19
)
Date of Publication: 15 Sep 1988
- Page(s):
- 1210 - 1211
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 3353442
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 15 Sep 1988
- Sponsored by :
- Institution of Engineering and Technology
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