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We report on the dc and microwave performance of an MOCVD-grown carbon-doped GaInP/GaAs double heterojunction bipolar transistor (DHBT) with a thin highly doped n-type GaInP layer in the collector. The DHBT showed improved current-voltage characteristics at low collector-emitter bias compared with those of a DHBT without the heavily doped GaInP layer, while maintaining a high breakdown voltage (BV/sub CEO//spl sim/20 V). Small area, self-aligned emitter transistors with two 2×5 μm2 emitter fingers were fabricated and exhibited fT and fmax of 53 GHz and 75 GHz, respectively. These results indicate the promise of carbon-doped base GaInP/GaAs DHBT's for high-power microwave applications.