By Topic

Signal formation in a-Si:H particle detectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Hamel, L.A. ; Lab. de Phys. Nucl. et Groupe des Couches Minces, Montreal Univ., Que., Canada ; Dubeau, J. ; Pochet, T. ; Equer, B.

The response of a hydrogenated amorphous silicon thin film p-i-n diode to protons is presented as a function of the applied bias. A typical pulse shape is also presented. These data are explained on the basis of a model whose main features are fast (<5 ns) electron collection and slow (a few microseconds) hole collection due to multiple trapping transport through the shallow gap states. The overall charge normalization yields a mean pair creation energy ∈p of 3.4-4.4 eV, comparable to 3.63 eV in crystalline silicon despite the larger 1.7-eV gap. To explain this result, a microscopic Monte Carlo calculation, taking into account the actual density of states in a-Si:H, is used to study the energy sharing between ionization and phonon production during hot carrier thermalization. This simulation yields a value of 4.3 eV for ∈p

Published in:

Nuclear Science, IEEE Transactions on  (Volume:38 ,  Issue: 2 )