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Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers

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7 Author(s)
A. Bosacchi ; Istituto MASPEC, CNR, Parma ; S. Franchi ; E. Gombia ; R. Mosca
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The effects of the Al mole fraction of a thin (4 nm) AlxGa1-xAs cap on the barrier height and the thermal stability of Al/AlxGa1-xAs/Al0.25 Ga0.75As Schottky barriers prepared in situ by MBE have been investigated. The behaviour of the barrier heights and the ideality factors of diodes after annealing up to 435°C are studied

Published in:

Electronics Letters  (Volume:30 ,  Issue: 10 )