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Browse Journals & Magazines > Electronics Letters ...> Volume:30 Issue:10 Help

Electrical properties and thermal stability of MBE-grown Al/AlxGa1-xAs/Al0.25Ga0.75As Schottky barriers

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7 Author(s)
Bosacchi, A. ; Istituto MASPEC, CNR, Parma ; Franchi, S. ; Gombia, E. ; Mosca, R.
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The effects of the Al mole fraction of a thin (4 nm) AlxGa1-xAs cap on the barrier height and the thermal stability of Al/AlxGa1-xAs/Al0.25 Ga0.75As Schottky barriers prepared in situ by MBE have been investigated. The behaviour of the barrier heights and the ideality factors of diodes after annealing up to 435°C are studied

Published in:
Electronics Letters  (Volume:30 ,  Issue: 10 )

Date of Publication: 12 May 1994

Page(s):
820 - 822
ISSN :
0013-5194
INSPEC Accession Number:
4702467
Digital Object Identifier :
10.1049/el:19940533
Product Type:
Journals & Magazines
Date of Current Version :
06 August 2002
Issue Date :
12 May 1994
Sponsored by :
Institution of Engineering and Technology

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