By Topic

Piezoelectric field effect transistor (PEFET) using In0.2Ga0.8As/Al0.35Ga0.65 As/In0.2Ga0.8A s/GaAs strained layer structure on (111)B GaAs substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Lu, S.S. ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei ; Huang, C.L.

A novel electronic device using a two dimensional electron gas produced by the strain-induced electric field in a [111] growth-axis In 0.2Ga0.8As/Al0.35Ga0.65As/In 0.2Ga0.8A s/GaAs strained layer structure without modulation doping is reported. Two dimensional electron gas densities greater than 1011 cm-2 were observed both at room temperature and 77°K. A field effect transistor using this strain-layer structure was fabricated successfully

Published in:

Electronics Letters  (Volume:30 ,  Issue: 10 )