Referenced Items are not available for this document.
The authors have investigated the effect of strain on 1.3 μm InGaAsP lasers under the same well thickness (6 nm) and same lasing wavelength (1.34 μm) by changing the In and As contents. The maximum photoluminescence intensity, the narrowest photoluminescence full width at half maximum (23 meV), and minimum threshold current density (450 A/cm2) were obtained for 1.4% compressive strain. Moreover, a very low CW threshold current (1.3 mA) was also achieved in a 90-70% coated 200 μm long device
Published in:
Electronics Letters
(Volume:30
,
Issue:
10
)
Date of Publication: 12 May 1994
- Page(s):
- 788 - 789
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 4702446
- Digital Object Identifier :
- 10.1049/el:19940560
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 12 May 1994
- Sponsored by :
- Institution of Engineering and Technology
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