By Topic

n-step charge injection cancellation scheme for very accurate switched current circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $33
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
C. Toumazou ; Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London ; S. Xiao

An n-step charge injection cancellation scheme for switched current (SI) circuits is presented. By modifying a recently proposed two-step SI cell so that fine memories can be cascaded, n-stage fine cell schemes are now possible. The technique has been applied to CMOS class A, class AB and GaAs class A second generation cells

Published in:

Electronics Letters  (Volume:30 ,  Issue: 9 )