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Temperature dependence of drain-induced barrier lowering in deep submicrometre MOSFETs

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3 Author(s)
W. Fikry ; Lab. de Phys. des Composants a Semicond., ENSERF, Grenoble ; G. Ghibaudo ; M. Dutoit

A new method for extracting the drain-induced barrier lowering (DIBL) parameter in an MOS transistor is proposed. This method is used to study the influence of temperature on the DIBL effect. It is found that the DIBL parameter is almost independent of temperature between 50 and 300 K. This method makes it also possible to recalculate the intrinsic output characteristics that the device would have in the absence of DIBL, and, in turn, to evaluate the intrinsic device saturation parameters

Published in:

Electronics Letters  (Volume:30 ,  Issue: 11 )