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A CFD model for the PECVD of silicon nitride

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3 Author(s)
Collins, D.J. ; Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA ; Strojwas, A.J. ; White, D.D., Jr.

This work describes the methodology used to develop a computational fluid dynamic (CFD) model for the plasma-enhanced chemical vapor deposition (PECVD) of silicon nitride (SiNx) for an N 2SiH4-NH3 process. The model has been developed for the Applied Materials Precision 5000 single-wafer reactor, and has the reaction chamber geometry, thermal characteristics, and reactant delivery system incorporated into it. A one-dimensional simulator was used to investigate the initial reaction mechanisms. An experimental design was carried out using physically-based transformations in order to provide model calibration data. The reaction rates were then optimized using the experimental data and the one-dimensional simulator in conjunction with a nonlinear optimizer. A two-dimensional model has been developed using FLUENT, a commercially available computational fluid dynamics program. A simplified plasma modeling technique has been developed which permits the incorporation of electron-initiated reactions generated by the radio-frequency (RF) plasma. This model provides the capability to predict the film composition and deposition rates across the substrate surface. A comparison to the nominal point experimental data has been performed and is reported as well

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:7 ,  Issue: 2 )

Date of Publication:

May 1994

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