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An optimal neural network process model for plasma etching

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2 Author(s)
Kim, B. ; Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; May, G.S.

Neural network models of semiconductor processes have recently been shown to offer advantages in both accuracy and predictive ability over traditional statistical methods. However, model development is complicated by the fact that back-propagation neural networks contain several adjustable parameters whose optimal values are initially unknown. These include learning rate, initial weight range, momentum, and training tolerance, as well as the network architecture. The effect of these factors on network performance is investigated here by means of a D-optimal experiment. The goal is to determine how the factors impact network performance and to derive a set of parameters which optimize performance based on several criteria. The network responses optimized are learning capability, predictive capability, and training time. Learning and prediction accuracy are quantified by the experimental error of the model. The process modeled is polysilicon etching in a CCl 4-based plasma. Statistical analysis of the experimental results reveals that learning capability and convergence speed depend mostly on the learning parameters, whereas prediction is controlled primarily by the number of hidden layer neurons. An optimal network structure and parameter set has been determined which minimizes learning error, prediction error, and training time individually as well as collectively

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Semiconductor Manufacturing, IEEE Transactions on  (Volume:7 ,  Issue: 1 )