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1.5-W CW S-band GaInP/GaAs/GaInP double heterojunction bipolar transistor

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3 Author(s)
Liu, W. ; Corp. R&D, Texas Instrum. Inc., Dallas, TX, USA ; Beam, E., III ; Khatibzadeh, A.

We report the first large-signal power result from a double heterojunction bipolar transistor (DHBT) based on the GaInP/GaAs/GaInP material system. A CW output power of 1.51 W and a power added efficiency of 52% were achieved at 3 GHz. Because the GaInP collector has a relatively high bandgap of 1.89 eV, high DC bias voltage operation with collector bias extending to 20 V (for a 40-V swing) is possible in this GaInP/GaAs/GaInP DHBT. This high DC bias voltage operation represents a unique advantage over the more conventional AlGaAs/GaAs HBT.<>

Published in:

Electron Device Letters, IEEE  (Volume:15 ,  Issue: 6 )