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Polarization-insensitive optical amplifier with tensile-strained-barrier MQW structure

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6 Author(s)
Magari, K. ; NTT Opto-Electron. Labs., Kanagawa, Japan ; Okamoto, M. ; Suzuki, Y. ; Sato, K.
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A new approach to achieving a polarization-insensitive semiconductor optical amplifier is presented. The active layer consists of a tensile-strained-barrier MQW structure that enhances TM mode gain. Polarization sensitivity below 0.5 dB is realized at a wavelength of 1.56 μm. A signal gain of 27.5 dB is obtained along with a saturation output power of 14 dBm. Deriving the refractive indices of well and barrier layers from both experiment and theory, we succeed in separation of the effect of the confinement factor and the gain coefficient. It is determined that TM mode gain enhancement in this structure is primarily due to the increase in the confinement factor

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Quantum Electronics, IEEE Journal of  (Volume:30 ,  Issue: 3 )