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Polarization dependence of optoelectronic properties in quantum dots and quantum wires-consequences of valence-band mixing

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4 Author(s)
Willatzen, M. ; TFL Telecommun. Res. Lab., Horsholm, Denmark ; Tanaka, T. ; Arakawa, Y. ; Singh, J.

The electronic bandstructure in quantum dots and quantum wires is studied, including the valence-band mixing effects. Based on the bandstructure, results for the polarization dependence of absorption and gain (at room temperature) are examined. The related differential gain and the α-parameter is also studied. Our results show that it is extremely important to include valence-band mixing effects in predicting the laser performance of such structures

Published in:

Quantum Electronics, IEEE Journal of  (Volume:30 ,  Issue: 3 )

Date of Publication:

Mar 1994

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